Sublimation-Dissociation of Crystalline Germanium Nitride Ge3N4 and Preparation of Amorphous Oxynitride Films Ge3N4-xO1.5x

The question of detachment-sublimation of -α and β-modifications of germanium nitride and their combinations is considered. In the hotness range of 650-750oC it sublimates. In the range of ∼ (750–850)oC, prejudiced dissociation of Ge3N4 is noticed, which is followed by evaporation of the balance of the reliable phase. About 850oC and above Ge3N4 entirely dissociates. During sublimation of translucent germanium nitride in the cold zone of the electrical device, an nebulous film of oxynitride is obtained.

Author(s) Details:

Irakli Nakhutsrishvili,
Institute of Cybernetics of Georgian Technical University, Georgia.

Zurab Adamya,
University of Georgia, Georgia and Tbilisi State University, Georgia.

Irakli Stepnadze,
Institute of Cybernetics of Georgian Technical University, Georgia.

Please see the link here: https://stm.bookpi.org/PCSR-V9/article/view/10737

Keywords: Germanium nitride, α and β-modifications, dissociation, sublimation

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