Metal telluride thin films have attracted great attention due to unique properties such as high absorption coefficient, direct band gap value and good transparency in the visible region. These films could be employed in solar cells, radiation detectors, electro-optic modulators, infrared detector, optical windows and opto-electronic devices. In this work, preparation and characterization of metal telluride films were reported based on the selected literature review. X-ray diffraction technique, atomic force microscopy and scanning electron microscopy method could be used to determine the structure and morphology of the obtained films, respectively. The band gap and optical properties were measured using UV-visible spectrophotometry. The obtained band gap suitable to cope with the maximum of solar spectrum.
Ho Soon Min,
Faculty of Health and Life Sciences, INTI International University, Putra Nilai, 71800, Negeri Sembilan, Malaysia.
Please see the link here: https://stm.bookpi.org/RACMS-V4/article/view/8698
Keywords: Thin films, solar cells, semiconductor, metal telluride, band gap