Determining the Effect of Annealing on the Crystal Structure of CoSi2/Si (100) Formed by MBE, SSE and RE Epitaxy Techniques

The paper presents original experimental results related to the study of the effect of annealing on the crystal structure of the surface of silicon doped with cobalt ions. The findings of research on CoSi2/Si(100) epitaxial structures formed by molecular beam epitaxy (MBE), solid phase epitaxy (SPE), and other techniques are presented. It has been established that there are relationships between the morphology, stoichiometry, and growth conditions of CoSi2/ Si structures. The Auger The ratios of the intensities of Auger signals of cobalt and silicon in the CoSi2 layer, as well as silicon in CoSi2 and silicon substrate, were determined using the sample profile. The authors back up the notion that under particular heat treatment circumstances, epitaxial silicides are generated due to radiation of a single crystal’s surface, which can act as conductive layers or metal coated layers. MBE, SSE, and other technologies have been used to create structural state diagrams of CoSi2/Si (100) thin-film systems.
Author(s) DetailsB. E. Egamberdiev
Tashkent State Technical University, Tashkent, Uzbekistan.

A. Sh. Mavlyanov
Tashkent State Technical University, Tashkent, Uzbekistan.

Sh. A. Sayfulloyev
Scientific Research Institute of Physics of Semiconductors and Microelectronics National University of Uzbekistan, Tashkent, Uzbekistan.

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