Analysis of Spectral Reflectance of Layers Formed by Anodic Etching of Silicon

In several applications in optoelectronics and photovoltaics, porous silicon structures are employed to reduce spectrum reflectance. We were able to make porous silicon structures by anodizing p-type silicon substrates. Various etching conditions, such as electrical potential, current, and etching duration, were used in the forming procedure. The sample structures are influenced by the forming conditions. The result is inhomogeneous structures with varying microstructures and optical characteristics. In our method, we investigate the optical properties by including the effective medium approximation theory into a theoretical model of sample spectral reflectance. The thickness of produced layers, dielectric functions, and volume fractions of structural components were recovered using an optimised spectral reflectance model. The optical analysis results match the microstructure evolution during sample formation.

Author (s) Details

Stanislav Jurecka
Institute of Aurel Stodola, Faculty of Electrical Engineering and Information Technology, University of Žilina, Nálepku 1390, 03101 Liptovský Mikuláš, Slovak Republic.

Martin Králik
Institute of Aurel Stodola, Faculty of Electrical Engineering and Information Technology, University of Žilina, Nálepku 1390, 03101 Liptovský Mikuláš, Slovak Republic.

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